The degradation of

The modern technology of integrated schemes develops in the direction of reducing the size of the devices and increasing the density of packaging schemes on the crystal. As a result of a decrease in the width and thickness of metal connections, the current density in them is 10m07 ASM2. The electric current of such a high density causes significant heating of the conductive and isolation layers due. The total effect of the internal stresses that occur in the process of applying the metal film, the voltages caused by electro migration, as well as thermal stresses, leads to the degradation of thin metal connections when high -density is skipped. The transfer of mass during electroMigration and relaxation of internal stresses developing during thermal effects determine the formation of cavities and mounds on the surface of metal compounds that lead to the destruction of conductive and isolating layers in multi -layer structures.